Research by Assistant Professor Jacob S. Suissa at the University of Tennessee, Knoxville, is revealing complexity in how ...
Abstract: We proposed a new model for gated-anode diodes (GADs) based on gallium nitride (GaN) high-electron mobility transistors (HEMTs) to optimize the device structure toward efficient microwave ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback